EFFECTS OF COMBINED X-RAY-IRRADIATION AND HOT-ELECTRON INJECTION ON NMOS TRANSISTORS

被引：2

作者：

BALASINSKI, A ^{[1
]}

CHEN, WL ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 07期

关键词：

MOS TRANSISTORS; RADIATION EFFECTS; HOT-CARRIER INJECTION;

D O I：

10.1007/BF02655604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Changes of NMOS transistor parameters after combined stress of x-ray irradiation and hot-electron injection were studied. We found that, in general, the resultant effects depended strongly on the order of the stress sequence. Of the parameters studied, oxide charge trapping depends more significantly on the stress sequence than the generation of interface traps. Interface trap transformation process and nonuniform defect distribution along the channel have been observed under certain stress conditions. Consequences of the above effects on the transistor dc parameters are discussed.

引用

页码：737 / 743

页数：7

共 5 条

[1]

BALASINSKI A, 1991, 179TH M EL SOC WASH

[2] ELECTRON TRAPPING DURING HIGH-FIELD TUNNELING INJECTION IN METAL-OXIDE-SILICON CAPACITORS - THE EFFECT OF GATE-INDUCED STRAIN [J].