ELECTRON TRAPPING DURING HIGH-FIELD TUNNELING INJECTION IN METAL-OXIDE-SILICON CAPACITORS - THE EFFECT OF GATE-INDUCED STRAIN

被引：9

作者：

HOOK, TB ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：931 / 938

页数：8

共 38 条

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