HOT-ELECTRON-INDUCED DEFECTS AT THE SI-SIO2 INTERFACE AT HIGH FIELDS AT 295-K AND 77-K

被引：40

作者：

FISCHETTI, MV

RICCO, B

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2854 / 2859

页数：6

共 28 条

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