ELECTRON TRAPPING DURING HIGH-FIELD TUNNELING INJECTION IN METAL-OXIDE-SILICON CAPACITORS - THE EFFECT OF GATE-INDUCED STRAIN

被引：9

作者：

HOOK, TB ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：931 / 938

页数：8

共 38 条

[11] HIGH-FIELD TUNNELING CALCULATIONS IN METAL-OXIDE-SILICON CAPACITORS INCORPORATING THE PERIMETER EFFECT [J].

HOOK, TB ;

MA, TP .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) :3881-3889

[12] HOT-ELECTRON INDUCED INTERFACE TRAPS IN METAL/SIO2/SI CAPACITORS - THE EFFECT OF GATE-INDUCED STRAIN [J].

HOOK, TB ;

MA, TP .

APPLIED PHYSICS LETTERS, 1986, 48 (18) :1208-1210

[13] PERIMETER-RELATED CURRENT IN HIGH-FIELD TUNNELING INTO SIO2 [J].

HOOK, TB ;

MA, TP .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :417-419

[14]

HOOK TB, 1986, THESIS YALE U

[15]

HOOK TB, UNPUB

[16] THE EFFECT OF FOWLER-NORDHEIM TUNNELING CURRENT ON THIN SIO2 METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].

HOSOI, T ;

AKIZAWA, M ;

MATSUMOTO, S .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2072-2076

[17] TRAP GENERATION DURING LOW-FLUENCE AVALANCHE-ELECTRON INJECTION IN METAL-OXIDE-SILICON CAPACITORS [J].

HSU, CCH ;

PAN, SCS ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1326-1329

[18] EFFECTS OF AVALANCHE INJECTION OF ELECTRONS INTO SILICON DIOXIDE - GENERATION OF FAST AND SLOW INTERFACE STATES [J].

LAI, SK ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6231-6240

[19] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].

LAX, M .

PHYSICAL REVIEW, 1960, 119 (05) :1502-1523

[20] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

← 1 2 3 4 →