TRAP GENERATION DURING LOW-FLUENCE AVALANCHE-ELECTRON INJECTION IN METAL-OXIDE-SILICON CAPACITORS

被引：10

作者：

HSU, CCH

PAN, SCS

SAH, CT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.336101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1326 / 1329

页数：4

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