EXACT CAPACITANCE OF A LOSSLESS MOS CAPACITOR

被引：13

作者：

MCNUTT, MJ

SAH, CT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 03期

关键词：

D O I：

10.1016/0038-1101(76)90171-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：255 / 257

页数：3

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[7] HIGH-FREQUENCY SPACE-CHARGE LAYER CAPACITANCE OF STRONGLY INVERTED SEMICONDUCTOR SURFACES [J].

MCNUTT, MJ ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1974, 17 (04) :377-385

[8]

NAKHMANSON RS, 1964, SOV PHYS-SOL STATE, V6, P859

[9] EXACT ANALYTICAL SOLUTION OF HIGH FREQUENCY LOSSLESS MOS CAPACITANCE-VOLTAGE CHARACTERISTICS AND VALIDITY OF CHARGE ANALYSIS [J].

SAH, CT ;

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[10] EQUIVALENT CIRCUIT MODEL IN SOLID-STATE ELECTRONICS .3. CONDUCTION AND DISPLACEMENT CURRENTS [J].

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