HIGH-FREQUENCY SPACE-CHARGE LAYER CAPACITANCE OF STRONGLY INVERTED SEMICONDUCTOR SURFACES

被引：29

作者：

MCNUTT, MJ

SAH, CT

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 04期

关键词：

D O I：

10.1016/0038-1101(74)90129-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：377 / 385

页数：9

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