A MODEL DESCRIBING HOT-CARRIER AND RADIATION EFFECTS IN MOS-TRANSISTORS

被引：8

作者：

MCBRAYER, JD ^{[1
]}

PASTOREK, RA ^{[1
]}

JONES, RV ^{[1
]}

OCHOA, A ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO, CARLSBAD, CA 92008 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1647 / 1651

页数：5

共 6 条

[1] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION [J].

HSU, FC ;

TAM, S .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :50-52

[2] RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE [J].

HUGHES, HL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) :195-&

[3] CORRELATION OF HOT-CARRIER AND RADIATION EFFECTS IN MOS-TRANSISTORS [J].

MCBRAYER, JD ;

FLEETWOOD, DM ;

PASTOREK, RA ;

JONES, RV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3935-3939

[4] A COMPARISON OF IONIZING-RADIATION AND HOT-ELECTRON EFFECTS IN MOS STRUCTURES [J].

MIKAWA, RE ;

LENAHAN, PM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1573-1575

[5] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J].

NING, TH ;

COOK, PW ;

DENNARD, RH ;

OSBURN, CM ;

SCHUSTER, SE ;

YU, HN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :346-353

[6] SOME ASPECTS OF HOT-ELECTRON AGING IN MOSFETS [J].

RADOJCIC, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1381-1386

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