DENSITY DEPENDENCE OF ELECTRON-HOLE PLASMA LIFETIME IN SEMICONDUCTOR QUANTUM-WELLS

被引：19

作者：

BONGIOVANNI, G ^{[1
]}

STAEHLI, JL ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.46.9861

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on an investigation of the electron-hole (e-h) plasma decay time tau(tot) versus e-h pair density in semiconductor quantum wells. We determine the density reached in a steady-state photoluminescence experiment from the optical spectra and compare it with the e-h pair generation rate. We find that in our samples only radiative e-h recombination is important, and that nonradiative processes and plasma expansion have negligible effects on tau(tot). At plasma densities larger than 5 x 10(12) cm-2, we observe a strong nonlinear reduction of the e-h capture rate into the quantum wells.

引用

页码：9861 / 9864

页数：4