CARRIER DIFFUSION IN SEMICONDUCTORS SUBJECT TO LARGE GRADIENTS OF EXCITED CARRIER DENSITY

被引：37

作者：

WAUTELET, M

VANVECHTEN, JA

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.23.5551

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5551 / 5554

页数：4

共 26 条

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