SUBSTRATE MISORIENTATION EFFECTS IN ALGAINP LASERS AND CRYSTALS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：6

作者：

KIKUCHI, A

KISHINO, K

机构：

[1] Kishino Laboratory, Department of Electrical and Electronics Engineering, Sophia University, Chiyoda-ku, Tokyo, 102, 7-1, Kioi-cho

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/0022-0248(93)90567-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Lasing performance of GaInP/AlInP lasers grown on misoriented GaAs substrates by gas source molecular beam epitaxy (GS-MBE) strongly depended on the substrate misorientation angle (SMA). In this paper, dependences of photoluminescence (PL) properties and carrier concentration of (AlxGa1-x)0.5In0.5P Crystals grown by GS-MBE, on SMA were systematically investigated. It turned out, through the PL measurements, that the Al-related non-radiative recombination in (AlxGa1-x)0.5In0.5P layers was reduced with increasing of SMA. On the other hand, the electrical activity of Be in p-type Al0.5In0.5P layers was enhanced together with increased SMA. These substrate misorientation effects in GS-MBE grown AlGaInP are discussed in connection with the improved lasing characteristics.

引用

页码：9 / 13

页数：5

共 16 条

[1] SHORT-WAVELENGTH (LESS-THAN-OR-APPROXIMATELY-6400-A) ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N IN0.5(ALXGA1-X)0.5P QUANTUM WELL LASERS
DALLESASSE, JM
NAM, DW
DEPPE, DG
HOLONYAK, N
FLETCHER, RM
KUO, CP
OSENTOWSKI, TD
CRAFORD, MG
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1826 - 1828
[2] ALGAINP VISIBLE LASER-DIODES GROWN ON MISORIENTED SUBSTRATES
HAMADA, H
SHONO, M
HONDA, S
HIROYAMA, R
YODOSHI, K
YAMAGUCHI, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1483 - 1490
[3] GAINP/ALINP QUANTUM WELL STRUCTURES AND DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS
HAYAKAWA, T
TAKAHASHI, K
HOSODA, M
YAMAMOTO, S
HIJIKATA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08): : L1553 - L1555
[4] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
MORI, Y
SATO, H
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1027 - 1028
[5] GAINP/ALGAINP DOUBLE-HETEROSTRUCTURE LASER GROWN ON A (111)B-ORIENTED GAAS SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
IKEDA, M
MORITA, E
TODA, A
YAMAMOTO, T
KANEKO, K
[J]. ELECTRONICS LETTERS, 1988, 24 (17) : 1094 - 1095
[6] SHORT-WAVELENGTH (638NM) ROOM-TEMPERATURE CW OPERATION OF INGAAIP LASER-DIODES WITH QUATERNARY ACTIVE LAYER
ISHIKAWA, M
SHIOZAWA, H
TSUBURAI, Y
UEMATSU, Y
[J]. ELECTRONICS LETTERS, 1990, 26 (03) : 211 - 213
[7] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ISHIKAWA, M
OHBA, Y
SUGAWARA, H
YAMAMOTO, M
NAKANISI, T
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208
[8] HIGH-OPTICAL-QUALITY GAINP AND GAINP AIINP DOUBLE HETEROSTRUCTURE LASERS GROWN ON GAAS SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
KIKUCHI, A
KISHINO, K
KANEKO, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) : 4557 - 4559
[9] REMARKABLE REDUCTION OF THRESHOLD CURRENT-DENSITY BY SUBSTRATE MISORIENTATION EFFECTS IN 660 NM VISIBLE-LIGHT LASERS WITH GAINP BULK ACTIVE LAYERS
KIKUCHI, A
KISHINO, K
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (09) : 1046 - 1048
[10] ROOM-TEMPERATURE CONTINUOUS WAVE OPERATION OF GAINP/AIINP VISIBLE-LIGHT LASER WITH GAINP/AIINP SUPERLATTICE CONFINEMENT LAYER GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
KIKUCHI, A
KANEKO, Y
NOMURA, I
KISHINO, K
[J]. ELECTRONICS LETTERS, 1990, 26 (20) : 1668 - 1670

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