SURFACE-REACTION AND STABILITY OF PARYLENE-N AND PARYLENE-F THIN-FILMS AT ELEVATED-TEMPERATURES

被引:31
作者
WU, PK
YANG, GR
MCDONALD, JF
LU, TM
机构
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,DEPT PHYS,TROY,NY 12180
[2] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180
关键词
DIFFUSION; PARYLENE; SURFACES; THIN FILMS;
D O I
10.1007/BF02659727
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The morphology and chemical structure of Parylene F and Parylene N films annealed in air, N-2, and vacuum were examined. The decomposition temperatures of Parylene N in air, N-2, and vacuum were determined to be 175, 350, and 425 degrees C, respectively. The decomposition temperatures of Parylene F in air and N-2 were determined to be 400 and 500 degrees C, respectively. For both materials, the decomposition process with and without the presence of O is different. In the case of Parylene N, O diffuses into the materials and reacts with the C in the polymer. In the case of Parylene F, no reaction products with O are observed on the surface. Annealing at the decomposition temperature resulted in the decomposition of -CF2- functional groups to -CF- functional groups in the Parylene F. Thicker films, >1 mu m, of either material cracked during annealing while films <0.5 mu m, remained smooth and transparent. Pinholes were also observed in the Parylene F film deposited using the Gorham method after annealing.
引用
收藏
页码:53 / 58
页数:6
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