BUFFERED DIRECT INJECTION OF PHOTOCURRENTS INTO CHARGE-COUPLED-DEVICES

被引：12

作者：

BLUZER, N

STEHLIK, R

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1978.1051000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：86 / 92

页数：7

共 13 条

[1]

BARBE DF, 1976, P IEEE, V63, P52

[2] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J].

BARRON, MB .

[3]

BLUZER N, 1977, ELECTRON DEVICES, V24, P1201

[4]

FRENCH DE, 1974, P IRIS DAYTON MAY

[5]

HANSELL GL, 1977, ELECTRON DEVICES, V24, P1202

[6]

HESS MR, 1974, P IRIS, V22

[7]

LIN HC, 1970, J SOLID STATE CIRCUI, V5

[8]

Lloyd J., 1975, THERMAL IMAGING SYST

RICHMAN, P .

[10] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES [J].

ROLLS, WH ;

EDDOLLS, DV .

INFRARED PHYSICS, 1973, 13 (02) :143-147