GA1-XALX AS PRODUCED BY AL+ ION IMPLANTATION OF GAAS

被引：16

作者：

HUNSPERGER, RG

MARSH, OJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 09期

关键词：

D O I：

10.1063/1.1653938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：327 / +

页数：1

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