MOLECULAR-DYNAMICS SIMULATIONS OF THE STABILITY OF AMORPHOUS-SILICON

被引：12

作者：

KWON, I ^{[1
]}

BISWAS, R ^{[1
]}

SOUKOULIS, CM ^{[1
]}

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,US DOE,AMES LAB,AMES,IA 50011

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.43.1859

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed molecular-dynamics simulations as a first step towards understanding the Staebler-Wronski effect in amorphous silicon, utilizing classical silicon potentials and computer-generated amorphous silicon structures. A localized hot spot is used to model the nonradiative transfer of photoexcited carrier energy to the lattice. This leads to structural degradation in a-Si networks in which weak Si-Si bonds are broken and dangling bonds are produced, requiring a threshold energy of about 0.8-1.0 eV. Thermal annealing of an a-Si model with coordination defects is also described.

引用

页码：1859 / 1862

页数：4

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