TRANSITORY ELECTRICAL PROPERTIES OF NORMAL-TYPE GERMANIUM AFTER A NEUTRON PULSE

被引：17

作者：

STEIN, HJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 08期

关键词：

D O I：

10.1063/1.1735834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1309 / 1313

页数：5

共 10 条

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[5]

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[7] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

GOSSICK, BR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218

[8] NATURE OF DEFECTS ARISING FROM FAST NEUTRON IRRADIATION OF SILICON SINGLE CRYSTALS [J].

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[9] STRUCTURE OF DEUTERON-IRRADIATED GERMANIUM [J].

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[10]

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