PHOTO-LUMINESCENCE OF THERMALLY TREATED N+ SI-DOPED AND SEMI-INSULATING CR-DOPED GAAS SUBSTRATES

被引：20

作者：

SWAMINATHAN, V

SCHUMAKER, NE

ZILKO, JL

机构：

来源：

JOURNAL OF LUMINESCENCE | 1981年 / 22卷 / 02期

关键词：

D O I：

10.1016/0022-2313(81)90006-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：153 / 170

页数：18

共 38 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2]

BARRERA J, 1975, 5TH P BIENN CORN EL, P135

[3] RADIATIVE TRANSITIONS INDUCED IN GALLIUM-ARSENIDE BY MODEST HEAT-TREATMENT [J].

BIREY, H ;

SITES, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :619-634

[4]

BLOCKER TG, 1970, SOLID STATE COMMUN, V8, P1317

[5]

CASEY HC, 1978, HETEROSTRUCTURE LA A, P242

[6] PHOTOLUMINESCENCE FROM CHROMIUM IN GAAS [J].

DEVEAUD, B ;

FAVENNEC, PN .

SOLID STATE COMMUNICATIONS, 1977, 24 (07) :473-476

[7] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE [J].

DINGLE, R .

PHYSICAL REVIEW, 1969, 184 (03) :788-&

[8] OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].

EAGLES, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83

[9]

HALLAIS J, 1976, GALLIUM ARSENIDE REL, P220

[10] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].

HARRIS, JS ;

NANNICHI, Y ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&

← 1 2 3 4 →