PREPARATION AND PROPERTIES OF ULTRATHIN HIGH-TC SUPERCONDUCTING FILMS ON SI

被引：7

作者：

MYOREN, H ^{[1
]}

HARADA, K ^{[1
]}

MIYAMOTO, A ^{[1
]}

MIYAMOTO, N ^{[1
]}

OSAKA, Y ^{[1
]}

机构：

[1] TSUYAMA NATL COLL TECHNOL,DEPT ELECT ENGN,TSUYAMA 708,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

HIGH-TC SUPERCONDUCTOR; BA2YCU3OX ULTRATHIN FILMS; SI SUBSTRATE; BUFFER LAYERS; RUTHERFORD BACKSCATTERING; ION CHANNELING; RHEED; CRITICAL CURRENTS;

D O I：

10.1143/JJAP.30.3896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin Ba2YCu3Ox films with thickness down to 7 nm were grown epitaxially on a Si(100) substrate using buffer layers (Y2O3(10 nm) and YSZ(40 nm)). These films show metallic behavior and full superconductivity through revealing broadened transitions. The critical current densities at 40 K are about 5 x 10(6) A/cm2 and 5 x 10(5) A/cm2 for 100 nm- and 28 nm-thick films, respectively.

引用

页码：3896 / 3899

页数：4

共 7 条

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[7] SPUTTER SYNTHESIS OF BA2YCU3OY AS-DEPOSITED SUPERCONDUCTING THIN-FILMS FROM STOICHIOMETRIC TARGET - A MECHANISM OF COMPOSITIONAL DEVIATION AND ITS CONTROL [J].

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