THEORETICAL COMPARISON OF THE STABILITY CHARACTERISTICS OF CAPPED AND UNCAPPED GEXSI1-X STRAINED EPILAYERS

被引:26
作者
JAIN, SC
GOSLING, TJ
WILLIS, JR
BULLOUGH, R
BALK, P
机构
[1] UK AEA TECHNOL,HARWELL LAB,HARWELL OX11 0RA,OXON,ENGLAND
[2] UNIV BATH,SCH MATH SCI,BATH BA2 7AY,AVON,ENGLAND
关键词
D O I
10.1016/0038-1101(92)90007-Y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A theoretical comparison of the stability characteristics of capped and uncapped GexSi1-x strained layers is performed, using exact expressions for the energy of orthogonal, periodic arrays of misfit dislocations in both cases. The critical thickness of a capped layer is predicted to be between two and four times larger than that of an uncapped layer which has the same lattice misfit with its substrate, Experimentally determined values of the critical layer thickness of capped layers are in good agreement with the theory presented. Equilibrium dislocation density and rate of plastic flow are predicted to be considerably reduced in a capped layer in comparison with an uncapped layer of the same thickness and misfit.
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收藏
页码:1073 / 1079
页数:7
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