THE STRUCTURAL STABILITY OF UNCAPPED VERSUS BURIED SI1-XGEX STRAINED LAYERS THROUGH HIGH-TEMPERATURE PROCESSING

被引：36

作者：

HOUGHTON, DC ^{[1
]}

GIBBINGS, CJ ^{[1
]}

TUPPEN, CG ^{[1
]}

LYONS, MH ^{[1
]}

HALLIWELL, MAG ^{[1
]}

机构：

[1] BRITISH TELECOMMUN PLC,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

THIN SOLID FILMS | 1989年 / 183卷

关键词：

D O I：

10.1016/0040-6090(89)90442-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：171 / 182

页数：12

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