EXPERIMENTAL DEMONSTRATION OF RESONANT INTERBAND TUNNEL-DIODE WITH ROOM-TEMPERATURE PEAK-TO-VALLEY CURRENT RATIO OVER 100

被引：27

作者：

DAY, DJ

YANG, RQ

LU, JA

XU, JM

机构：

[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA

[2] VARIAN ASSOCIATES INC,RES CTR,PALO ALTO,CA 94303

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 03期

关键词：

D O I：

10.1063/1.353231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports a recent experiment on resonant interband tunneling (RIT) diodes and the measured room temperature peak-to-valley (P/V) current ratio of 104:1 which represents the highest P/V ratio ever reported in any tunneling device. The RIT diode studied in this work consists of an InGaAs/InAlAs double-quantum well system embedded in a pn junction structure grown on InP.

引用

页码：1542 / 1544

页数：3

共 15 条

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