DOUBLE QUANTUM-WELL RESONANT TUNNEL-DIODES

被引：33

作者：

DAY, DJ ^{[1
]}

CHUNG, Y ^{[1
]}

WEBB, C ^{[1
]}

ECKSTEIN, JN ^{[1
]}

XU, JM ^{[1
]}

SWEENY, M ^{[1
]}

机构：

[1] UNIV TORONTO,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.103503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.

引用

页码：1260 / 1261

页数：2

共 9 条

[1] OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES
BROWN, ER
SOLLNER, TCLG
PARKER, CD
GOODHUE, WD
CHEN, CL
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (17) : 1777 - 1779
[2] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE
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KIEHL, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368
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ESAKI, L
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[4] HETEROSTRUCTURE P-N-JUNCTION TUNNEL-DIODES
DAY, DJ
CHUNG, Y
WEBB, C
ECKSTEIN, JN
XU, JM
SWEENY, M
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (11) : 1140 - 1142
[5] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS
ESAKI, L
[J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604
[6] TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
GOLDMAN, VJ
TSUI, DC
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2693 - 2695
[7] NEGATIVE-RESISTANCE FIELD-EFFECT TRANSISTOR GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
KASTALSKY, A
BHAT, R
CHAN, WK
KOZA, M
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (10) : 1073 - 1077
[8] RESONANT INTERBAND TUNNEL-DIODES
SWEENY, M
XU, JM
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (06) : 546 - 548
[9] TUNNELING IN A FINITE SUPERLATTICE
TSU, R
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 562 - 564

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