RESONANT INTERBAND TUNNEL-DIODES

[1] BURNS CA, 1961, J APPL PHYS, V32, P1031

[2] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[3] DUKE CB, 1969, TUNNELING SOLIDS, pCH7

[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[5] POLYTYPE SUPER-LATTICES AND MULTI-HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L529 - L532

[6] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[7] IOGANSEN LV, 1965, ZH EKSP TEOR FIZ, V20, P180

[8] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[9] ZENER TUNNELING IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 181 - 188

[10] KELDYSH LV, 1958, ZH EKSP TEOR FIZ, V6, P763

[1] BURNS CA, 1961, J APPL PHYS, V32, P1031

[2] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[3] DUKE CB, 1969, TUNNELING SOLIDS, pCH7

[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[5] POLYTYPE SUPER-LATTICES AND MULTI-HETEROJUNCTIONS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L529 - L532

[6] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 61 - &

[7] IOGANSEN LV, 1965, ZH EKSP TEOR FIZ, V20, P180

[8] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[9] ZENER TUNNELING IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 181 - 188

[10] KELDYSH LV, 1958, ZH EKSP TEOR FIZ, V6, P763