HETEROSTRUCTURE P-N-JUNCTION TUNNEL-DIODES

被引：14

作者：

DAY, DJ ^{[1
]}

CHUNG, Y ^{[1
]}

WEBB, C ^{[1
]}

ECKSTEIN, JN ^{[1
]}

XU, JM ^{[1
]}

SWEENY, M ^{[1
]}

机构：

[1] UNIV TORONTO,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 11期

关键词：

D O I：

10.1063/1.103515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heterostructure p-n junction tunnel diodes with high peak to valley ratios (12: 1) at room temperature are demonstrated. The variation of peak and valley currents in diodes with different tunnel barriers is described, and the mechanisms responsible for the valley current and its temperature dependence are proposed. Ways to improve the peak to valley ratio and reduce junction capacitance are discussed.

引用

页码：1140 / 1142

页数：3

共 11 条

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