EPITAXY OF ZINC SULPHIDE ON SILICON

被引：17

作者：

RAWLINS, TGR

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1970年 / 5卷 / 10期

关键词：

D O I：

10.1007/BF00574860

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：881 / &

共 22 条

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CALOW, JT ;

OWEN, SJT ;

WEBB, PW .

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[5] KIKUCHI-LIKE REFLECTION PATTERNS OBTAINED WITH SCANNING ELECTRON MICROSCOPE [J].

COATES, DG .

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[6]

GALLI G, 1968, ELECTROCHEMICAL TECH, V6, P258

[7]

HILL JS, TO BE PUBLISHED

[8] ORIENTED GROWTH OF SEMICONDUCTORS .6. STACKING DISORDER IN EPITAXIAL INDIUM PHOSPHIDE [J].

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[9]

HOLLOWAY H, 1966, USE THIN FILMS PHYSI, P111

[10] Defects in Epitaxial Films of Semiconducting Compounds with the Sphalerite Structure [J].

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