BEHAVIOR OF FORWARD BIASED SILICON DIODES AT LOW-TEMPERATURES

被引：6

作者：

ALDRIDGE, RV ^{[1
]}

机构：

[1] UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NOR 88C,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(74)90182-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：617 / 619

页数：3

共 9 条

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[2] HEINRICH M, 1968, J APPL PHYS, V41, P296
[3] EFFECT OF MAGNETIC-FIELD ON CURRENT FILAMENT IN GOLD-DOPED SILICON
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[J]. APPLIED PHYSICS LETTERS, 1972, 21 (04) : 154 - +
[4] KLEIN N, 1969, ADVAN ELECTRON ELECT, V26, P309
[5] NEGATIVE-RESISTANCE CURRENT-VOLTAGE CHARACTERISTICS OF AN INDIUM ANTIMONIDE P+-P-N+ DIODE
NORDMAN, JE
KVINLAUG, H
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3244 - &
[6] MAGNETODIODE MODEL
PFLEIDERER, H
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 335 - +
[7] SZE SM, 1969, PHYSICS SEMICONDUCTI
[8] VANDERZIEL A, 1968, SOLID STATE PHYSICAL
[9] [No title captured]