EFFECT OF MAGNETIC-FIELD ON CURRENT FILAMENT IN GOLD-DOPED SILICON

[1] ALEKSEEV ME, 1970, SOV PHYS SEMICOND+, V3, P1514

[2] FILAMENTARY INJECTION IN SEMI-INSULATING SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4215 - &

[3] BOLTAEV AP, 1971, SOV PHYS SEMICOND+, V4, P1629

[4] FUKAMI T, 1963, JPN J APPL PHYS, V2, P535

[5] LOW-DENSITY INJECTED PLASMA IN P-TYPE INDIUM ANTIMONIDE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 296 - &

[6] HOMMA K, 1971, J I ELEC ENGR JAPAN, V91, P1936

[7] HOMMA K, 1967, J IECE JAPAN, V50, P1411

[8] KARAKUSHAN EI, 1961, SOV PHYS-SOL STATE, V3, P493

[9] OSCILLATORY MAGNETO-CURRENT IN FORWARD BIASED SEMICONDUCTOR JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1969, 14 (08) : 248 - &

[10] KOMATSUBARA K, 1964, JPN J APPL PHYS, V3, P72

[1] ALEKSEEV ME, 1970, SOV PHYS SEMICOND+, V3, P1514

[2] FILAMENTARY INJECTION IN SEMI-INSULATING SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4215 - &

[3] BOLTAEV AP, 1971, SOV PHYS SEMICOND+, V4, P1629

[4] FUKAMI T, 1963, JPN J APPL PHYS, V2, P535

[5] LOW-DENSITY INJECTED PLASMA IN P-TYPE INDIUM ANTIMONIDE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 296 - &

[6] HOMMA K, 1971, J I ELEC ENGR JAPAN, V91, P1936

[7] HOMMA K, 1967, J IECE JAPAN, V50, P1411

[8] KARAKUSHAN EI, 1961, SOV PHYS-SOL STATE, V3, P493

[9] OSCILLATORY MAGNETO-CURRENT IN FORWARD BIASED SEMICONDUCTOR JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1969, 14 (08) : 248 - &

[10] KOMATSUBARA K, 1964, JPN J APPL PHYS, V3, P72