DETERMINATION OF DEFORMATION POTENTIAL CONSTANTS FROM ELECTRON CYCLOTRON RESONANCE IN GERMANIUM AND SILICON

[31] Keyes R. W., 1968, SOLID STATE PHYS, V20, P37, DOI DOI 10.1016/S0081-1947(08)60217-9

[32] THE EFFECTS OF ELASTIC DEFORMATION ON THE ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS [J]. SOLID STATE PHYSICS, 1960, 11 : 149 - 221

[33] KRAG WE, 1966, J PHYS SOC JPN, VS 21, P230

[34] CYCLOTRON RESONANCE [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1960, 11 : 261 - 400

[35] CYCLOTRON RESONANCE MEASUREMENTS OF THE ENERGY BAND PARAMETERS OF GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (3-4) : 281 - 288

[36] MEASUREMENT OF ELASTIC CONSTANTS AT LOW TEMPERATURES BY MEANS OF ULTRASONIC WAVES - DATA FOR SILICON AND GERMANIUM SINGLE CRYSTALS, AND FOR FUSED SILICA [J]. JOURNAL OF APPLIED PHYSICS, 1953, 24 (08) : 988 - 997

[37] TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1957, 105 (02): : 525 - 539

[38] IMPURITY-ASSISTED INTERVALLEY ELECTRON SCATTERING OF GERMANIUM AND SILICON UNDER UNIAXIAL COMPRESSION [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (02) : 413 - &

[39] ELECTRON SCATTERING BY NEUTRALIZED ACCEPTORS IN GERMANIUM .2. ZINC [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 25 (02) : 436 - &

[40] MURASE K, 1960, J PHYS SOC JPN, V26, P1435

[31] Keyes R. W., 1968, SOLID STATE PHYS, V20, P37, DOI DOI 10.1016/S0081-1947(08)60217-9

[32] THE EFFECTS OF ELASTIC DEFORMATION ON THE ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS [J]. SOLID STATE PHYSICS, 1960, 11 : 149 - 221

[33] KRAG WE, 1966, J PHYS SOC JPN, VS 21, P230

[34] CYCLOTRON RESONANCE [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1960, 11 : 261 - 400

[35] CYCLOTRON RESONANCE MEASUREMENTS OF THE ENERGY BAND PARAMETERS OF GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (3-4) : 281 - 288

[36] MEASUREMENT OF ELASTIC CONSTANTS AT LOW TEMPERATURES BY MEANS OF ULTRASONIC WAVES - DATA FOR SILICON AND GERMANIUM SINGLE CRYSTALS, AND FOR FUSED SILICA [J]. JOURNAL OF APPLIED PHYSICS, 1953, 24 (08) : 988 - 997

[37] TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1957, 105 (02): : 525 - 539

[38] IMPURITY-ASSISTED INTERVALLEY ELECTRON SCATTERING OF GERMANIUM AND SILICON UNDER UNIAXIAL COMPRESSION [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (02) : 413 - &

[39] ELECTRON SCATTERING BY NEUTRALIZED ACCEPTORS IN GERMANIUM .2. ZINC [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 25 (02) : 436 - &

[40] MURASE K, 1960, J PHYS SOC JPN, V26, P1435