LIMITATIONS ON THE PERFORMANCE OF FIELD-EFFECT DEVICES FOR LOGIC APPLICATIONS

被引:14
作者
COOPER, JA
机构
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D O I
10.1109/PROC.1981.11954
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:226 / 231
页数:6
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共 41 条
[1]   HOT-CARRIER INSTABILITY IN IGFETS [J].
ABBAS, SA ;
DOCKERTY, RC .
APPLIED PHYSICS LETTERS, 1975, 27 (03) :147-148
[2]  
BOLEKY EJ, 1970, RCA REV, V31, P372
[3]   FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].
BOZLER, CO ;
ALLEY, GD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1128-1141
[4]  
BOZLER CO, 1979, 7TH P BIEN CORN C AC
[5]  
COBBOLD RSC, 1964, P I ELECTR ENG, V111, P1981
[6]   VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J].
COEN, RW ;
MULLER, RS .
SOLID-STATE ELECTRONICS, 1980, 23 (01) :35-40
[7]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[8]   PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].
EDEN, RC ;
WELCH, BM ;
ZUCCA, R ;
LONG, SI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :299-317
[9]   VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].
GAENSSLEN, FH ;
RIDEOUT, VL ;
WALKER, EJ ;
WALKER, JJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :218-229
[10]   DEVICE DOWN SCALING AND EXPECTED CIRCUIT PERFORMANCE [J].
HART, PAH ;
VANTHOF, T ;
KLAASSEN, FM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :421-429