QUASI-ONE-DIMENSIONAL IN-PLANE-GATE FIELD-EFFECT-TRANSISTOR

被引：13

作者：

MEINERS, U ^{[1
]}

BRUGGER, H ^{[1
]}

MAILE, BE ^{[1
]}

WOLK, C ^{[1
]}

KOCH, F ^{[1
]}

机构：

[1] TEDCH UNIV MUNCHEN,DEPT PHYS,D-85748 GARCHING,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90345-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of a quasi one-dimensional planar field-effect-transistor (FET) with two lateral and symmetric in-plane-gate electrodes (IPG) is realized. The vertical layer sequence consists of a GaAs/AlGaAs heterostructure and a delta-doped pseudomorphic InGaAs quantum well with a high-density two-dimensional electron gas (2DEG). The device configuration results in a strong lateral concentration of the confining electric field in the 2DEG plane. The fabricated devices operate excellently at room temperature with maximum currents (I(DS)) above 0.3 mA and transconductance (g(m)) values of 0.2 mS. Perfect pinch-off is achieved by a negative gate-voltage. Devices with planar arrays of quasi one-dimensional channels exhibit I(DS) > 6 mA and g(m) = 5 mS. A PMMA electron beam lithography process followed by a selective isolation implantation is used for the fabrication of IPG-FET devices.

引用

页码：1001 / 1004

页数：4

共 8 条

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