MODEL FOR THE CHANNEL-IMPLANTED ENHANCEMENT-MODE IGFET

被引：5

作者：

ROGERS, DM ^{[1
]}

HAYDEN, JD ^{[1
]}

RINERSON, DD ^{[1
]}

机构：

[1] NCR MICROELECTR,COLORADO SPRINGS,CO

来源：

关键词：

D O I：

10.1109/T-ED.1986.22601

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：955 / 964

页数：10

共 17 条

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[9] CHARACTERISTICS AND LIMITATION OF SCALED-DOWN MOSFETS DUE TO 2-DIMENSIONAL FIELD-EFFECT
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 980 - 986
[10] POON HC, 1973, IEDM, P156