REACTIONS OF ACETYLENE AND AMMONIA WITH THE SI(111) SURFACE AT HIGH-TEMPERATURES

被引：5

作者：

SMITH, FW

MEYERSON, B

机构：

[1] Department of Physics, The City College of New York, New York, NY 10031

来源：

THIN SOLID FILMS | 1979年 / 60卷 / 02期

关键词：

D O I：

10.1016/0040-6090(79)90192-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：227 / 230

页数：4

共 8 条

[1] OXIDATION OF SILICON AT HIGH TEMPERATURES AND LOW PRESSURE UNDER FLOW CONDITIONS AND VAPOR PRESSURE OF SILICON [J].

GULBRANSEN, EA ;

ANDREW, KF ;

BRASSART, FA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :834-+

[2] CARBIDE CONTAMINATION OF SILICON SURFACES [J].

HENDERSON, RC ;

MARCUS, RB ;

POLITO, WJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) :1208-+

[3] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2089-&

[4]

Lever R. F., 1970, Surface Science, V19, P435, DOI 10.1016/0039-6028(70)90052-X

[5] ENERGY EXCHANGE BETWEEN COLD GAS MOLECULES AND A HOT GRAPHITE SURFACE [J].

MEYER, L ;

GOMER, R .

JOURNAL OF CHEMICAL PHYSICS, 1958, 28 (04) :617-622

[6] CONVERSION OF SI TO EPITAXIAL SIC BY REACTION WITH C2H2 [J].

MOGAB, CJ ;

LEAMY, HJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1075-1084

[7] REACTION OF ETHYLENE WITH THE SI(111) AND (100) SURFACES AT HIGH-TEMPERATURES - CRITICAL CONDITIONS FOR THE GROWTH OF SIC [J].

SMITH, FW .

SURFACE SCIENCE, 1979, 80 (01) :388-393

[8] CRITICAL-TEMPERATURE FOR GROWTH OF SIC ON SI AND ITS EFFECT ON STACKING-FAULT NUCLEATION IN SI HOMOEPITAXY IN HIGH-VACUUM [J].

SMITH, FW ;

MEYERSON, B ;

MILLER, W .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :565-567

← 1 →