SOME PITFALLS IN FAST RAMP C-V MEASUREMENTS

被引：4

作者：

MCCAUGHAN, DV ^{[1
]}

MURPHY, VT ^{[1
]}

WALDEN, RH ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 12期

关键词：

D O I：

10.1016/0038-1101(73)90057-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1423 / 1427

页数：5

共 12 条

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[4]

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[6]

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[7] ION NEUTRALIZATION PROCESSES AT INSULATOR SURFACES AND CONSEQUENT IMPURITY MIGRATION EFFECTS IN SIO2 FILMS [J].

MCCAUGHAN, DV ;

KUSHNER, RA ;

MURPHY, VT .

PHYSICAL REVIEW LETTERS, 1973, 30 (13) :614-617

[8] LOW-ENERGY ION-BOMBARDMENT OF SILICON DIOXIDE FILMS ON SILICON [J].

MCCAUGHAN, DV ;

MURPHY, VT .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2008-2017

[9] VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2 [J].

POWELL, RJ ;

DERBENWICK, GF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :99-+

[10] CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR .2. RECOMBINATION CENTERS IN SURFACE SPACE-CHARGE LAYER [J].

SAH, CT ;

FU, HS .

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