DESIGN AND CALIBRATION OF A MICROFABRICATED FLOATING-ELEMENT SHEAR-STRESS SENSOR

被引：116

作者：

SCHMIDT, MA

HOWE, RT

SENTURIA, SD

HARITONIDIS, JH

机构：

[1] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

[2] MIT, TURBULENCE RES LAB, CAMBRIDGE, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 06期

关键词：

Manuscript received October 6; 1987; revised January 27; 1988. Support for M. A. Schmidt was provided through a 3M Sensor Fellowship. R. T. Howe was supported under an IBM Faculty Development Award. Devices were fabricated in the Microelectronics Laboratory of the MIT Center for Materials Science and Engineering which is supported in part by the National Science Foundation under Contract DMR-84-187 18. M. A. Schmidt and S. D. Senturia are with the Microsystems Technology Laboratories. Massachusetts Institute of Technology; Cambridge; MA 02139. R. T. Howe was with the Microsystems Technology Laboratories; Massachusetts Institute of Technology; MA 02139. He is now with the Department of Electrical Engineering and Computer Science; University of California; Berkeley; CA 94720. J. H. Haritonidis is with the Turbulence Research Laboratory; MA 02139. IEEE Log Number 8820662;

D O I：

10.1109/16.2527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：750 / 757

页数：8

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