MICROFABRICATED STRUCTURES FOR THE INSITU MEASUREMENT OF RESIDUAL-STRESS, YOUNGS MODULUS, AND ULTIMATE STRAIN OF THIN-FILMS

被引:181
作者
ALLEN, MG
MEHREGANY, M
HOWE, RT
SENTURIA, SD
机构
关键词
D O I
10.1063/1.98460
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:241 / 243
页数:3
相关论文
共 17 条
[1]  
Allen M., 1986, THESIS MIT
[2]  
Beams W., 1959, P INT C STRUCTURE PR, P183
[3]  
BOKOV YS, 1985, SOV MICROELECTRON+, V14, P210
[4]   A SIMPLE TECHNIQUE FOR DETERMINING THE STRESS AT THE SI-SIO2 INTERFACE [J].
BORDEN, PG .
APPLIED PHYSICS LETTERS, 1980, 36 (10) :829-831
[5]   A TECHNIQUE FOR THE DETERMINATION OF STRESS IN THIN-FILMS [J].
BROMLEY, EI ;
RANDALL, JN ;
FLANDERS, DC ;
MOUNTAIN, RW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1364-1366
[6]  
GELDERMANS P, 1984, POLYIMIDES SYNTHESIS, V2, P695
[7]  
GERE JM, 1984, MECHANICS MATERIALS, P407
[8]   A SIMPLE TECHNIQUE FOR THE DETERMINATION OF MECHANICAL STRAIN IN THIN-FILMS WITH APPLICATIONS TO POLYSILICON [J].
GUCKEL, H ;
RANDAZZO, T ;
BURNS, DW .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) :1671-1675
[9]  
HOFFMAN RW, 1976, NATO ADV STUDY I B, V14
[10]   STRESS IN POLYCRYSTALLINE AND AMORPHOUS-SILICON THIN-FILMS [J].
HOWE, RT ;
MULLER, RS .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4674-4675