RESONANT GATE TRANSISTOR

被引：746

作者：

NATHANSON, HC

NEWELL, WE

WICKSTROM, RA

DAVIS, JR

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 03期

关键词：

D O I：

10.1109/T-ED.1967.15912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：117 / +

页数：1

共 16 条

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[2]

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[7] A HIGH FIELD TRIODE [J].

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[8] A RESONANT-GATE SILICON SURFACE TRANSISTOR WITH HIGH-Q BAND-PASS PROPERTIES (SURFACE STATE MODULATION - MOS DEVICES - E/T) [J].

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WICKSTROM, RA .

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[9]

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[10] TUNED INTEGRATED CIRCUITS - STATE-OF-THE-ART SURVEY [J].

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