LASER-INDUCED EFFECTS IN HGCDTE PHOTOVOLTAIC DEVICES

被引:9
作者
DEWAMES, R
BAJAJ, J
YAO, ES
WILLIAMS, GM
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期
关键词
D O I
10.1116/1.576216
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:536 / 543
页数:8
相关论文
共 12 条
[1]   EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].
CHYNOWETH, A ;
LOGAN, RA ;
FELDMANN, WL .
PHYSICAL REVIEW, 1961, 121 (03) :684-&
[2]   CURRENT GENERATION MECHANISMS IN SMALL BAND-GAP HGCDTE P-N-JUNCTIONS FABRICATED BY ION-IMPLANTATION [J].
DEWAMES, RE ;
WILLIAMS, GM ;
PASKO, JG ;
VANDERWYCK, AHB .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :849-858
[3]   DARK CURRENT GENERATION MECHANISMS AND SPECTRAL NOISE CURRENT IN LONG-WAVELENGTH INFRARED PHOTODIODES [J].
DEWAMES, RE ;
PASKO, JG ;
YAO, ES ;
VANDERWYCK, AHB ;
WILLIAMS, GM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (04) :2655-2663
[4]   EFFECTS OF 6-MEV ELECTRON-IRRADIATION ON THE ELECTRICAL CHARACTERISTICS OF LPE HGO.7CDO.3TE/CDTE MESA PHOTODIODES [J].
DOMKOWSKI, DW ;
FELLER, DG ;
JOHNSON, LR ;
WESTMARK, CI ;
NORRIS, CB ;
FULLER, CT ;
BAJAJ, J .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1471-1473
[5]   RADIATION TESTING OF TRIMETAL INFRARED DETECTORS [J].
KALMA, AH ;
CESENA, RA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :4833-4839
[6]  
MCWHORTER AL, 1957, SEMICONDUCTOR SURFAC, P207, DOI DOI 10.1063/1.3060496
[7]   LIGHT-INDUCED METASTABLE EFFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].
PANKOVE, JI .
SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :141-151
[8]   OPTICAL AND FIELD-EFFECT STUDIES OF THE HG0.7CD0.3 TE-ANODIC OXIDE INTERFACE [J].
SCHOOLAR, RB ;
JANOUSEK, BK ;
ALT, RL ;
CARSCALLEN, RC ;
DAUGHTERY, MJ ;
FOTE, AA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :164-167
[9]   ANOMALOUS BEHAVIOR OF REVERSE LEAKAGE CURRENTS IN LIQUID-PHASE EPITAXIAL HGCDTE PHOTODIODES WITH 10 MEV ELECTRON IRRADIATIONS [J].
STAPP, RS ;
FELLER, DG ;
JOHNSON, LR ;
WESTMARK, CI ;
BAJAJ, J ;
VURAL, K ;
NEWMAN, PR ;
BLAZEJEWSKI, ER .
APPLIED PHYSICS LETTERS, 1988, 52 (19) :1614-1616
[10]  
SZE SM, 1969, PHYSICS SEMICONDUCTO