OPTICAL AND FIELD-EFFECT STUDIES OF THE HG0.7CD0.3 TE-ANODIC OXIDE INTERFACE

被引：29

作者：

SCHOOLAR, RB

JANOUSEK, BK

ALT, RL

CARSCALLEN, RC

DAUGHTERY, MJ

FOTE, AA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1116/1.571704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：164 / 167

页数：4

共 7 条

[1]

CATAGNUS PC, 1976, Patent No. 3977018

[2] MONOLITHIC HGCDTE CHARGE-TRANSFER DEVICE INFRARED IMAGING ARRAYS [J].

CHAPMAN, RA ;

BORRELLO, SR ;

SIMMONS, A ;

BECK, JD ;

LEWIS, AJ ;

KINCH, MA ;

HYNECEK, J ;

ROBERTS, CG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :134-145

[3] HIGH-PERFORMANCE BACKSIDE-ILLUMINATED HG0.78CD0.22TE-CDTE(LAMBDA-CO=10-MU-M) PLANAR DIODES [J].

CHU, M ;

VANDERWYCK, AHB ;

CHEUNG, DT .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :486-488

[4] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].

HEIMAN, FP ;

WARFIELD, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&

[5]

Janousek B. K., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V285, P118

[6] THE MECHANISM OF (HG,CD)TE ANODIC-OXIDATION [J].

JANOUSEK, BK ;

CARSCALLEN, RC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1720-1726

[7]

SCHOOLAR RB, 1981, JUN P IRIS DET SPEC

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