HIGH-QUALITY LONG-WAVELENGTH LASERS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TERTIARY-BUTYLARSINE

High quality long-wavelength InGaAsP/InP lasers were grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH3. Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA-grown material was at least as good as AsH3 material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds Ith as low as 11 mA were obtained for a 2-μm-wide semi-insulating blocking planar buried heterostructure laser lasing near 1.3 μm wavelength. The differential quantum efficiencies ηD were as high as 21%/facet with a low internal loss α=21 cm-1. In addition Ith as low as 18 mA and ηD as high as 18% have been obtained for multiplequantum well lasers at 1.54 μm wavelength. These results show that TBA might be used to replace AsH3 without compromising on laser performance.