STRAIN-MEASUREMENTS AND THERMAL-STABILITY OF SI1-XGEX/SI STRAINED LAYERS

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] BEAN JC, 1985, 1ST P INT S SI MBE E

[3] DAEMBKES H, 1987, SE MBE S HONOLULU

[4] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &

[5] DOOLITTLE LR, 1986, NUCL INSTRUM METH B, V15, P277

[6] STRAIN IN ULTRATHIN EPITAXIAL-FILMS OF GE/SI(100) MEASURED BY ION-SCATTERING AND CHANNELING [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (06) : 664 - 667

[7] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[8] GROWTH AND PROPERTIES OF SI/SIGE SUPERLATTICES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 630 - 639

[9] Kasper E., 1986, MAT RES SOC S P, V56, P347

[10] LEGOUES FK, 1987, FAL MRS M BOST

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] BEAN JC, 1985, 1ST P INT S SI MBE E

[3] DAEMBKES H, 1987, SE MBE S HONOLULU

[4] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &

[5] DOOLITTLE LR, 1986, NUCL INSTRUM METH B, V15, P277

[6] STRAIN IN ULTRATHIN EPITAXIAL-FILMS OF GE/SI(100) MEASURED BY ION-SCATTERING AND CHANNELING [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (06) : 664 - 667

[7] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[8] GROWTH AND PROPERTIES OF SI/SIGE SUPERLATTICES [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 630 - 639

[9] Kasper E., 1986, MAT RES SOC S P, V56, P347

[10] LEGOUES FK, 1987, FAL MRS M BOST