CLASSICAL ELECTRON TRAJECTORY IN SCANNING ELECTRON-MICROSCOPE MIRROR-IMAGE METHOD

被引:17
作者
CHEN, H
GONG, H
ONG, CK
机构
[1] Department of Physics, National University of Singapore, Singapore 0511
关键词
D O I
10.1063/1.357753
中图分类号
O59 [应用物理学];
学科分类号
摘要
A scanning electron microscope (SEM) is employed to study the charging phenomenon of polymethylmethacrylate using the mirror image method. Classical scattering theory is modified to calculate the total trapped charge Q. This theory has also been used to justify the use of a fitting procedure to calculate Q. The fitting procedure is more feasible for a SEM which does not have low accelerating voltage facility. Results from both methods are compared. Details of derivation are given.
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页码:806 / 809
页数:4
相关论文
共 12 条
[1]   CHARGING AND FLASHOVER INDUCED BY SURFACE POLARIZATION RELAXATION PROCESS [J].
BLAISE, G ;
LEGRESSUS, C .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) :6334-6339
[2]   A NOVEL SCANNING ELECTRON-MICROSCOPE METHOD FOR THE INVESTIGATION OF CHARGE TRAPPING IN INSULATORS [J].
GONG, H ;
ONG, CK .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :449-453
[3]   CHARGE TRAPPING ON DIFFERENT CUTS OF A SINGLE-CRYSTALLINE ALPHA-SIO2 [J].
GONG, H ;
LEGRESSUS, C ;
OH, KH ;
DING, XZ ;
ONG, CK ;
TAN, BTG .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1944-1948
[4]  
Gross B., 1980, Electrets, DOI 10.1007/3540173358_12
[5]  
JACKSON JD, 1975, CLASSICAL ELECTRODYN, pCH1
[6]  
KITTEL C, 1973, MECHANICS, V1, pCH9
[7]  
LEGRESSUS C, 1991, J APPL PHYS, V69, P6235
[8]   FLASHOVER OF INSULATORS IN VACUUM - REVIEW OF THE PHENOMENA AND TECHNIQUES TO IMPROVE HOLDOFF VOLTAGE [J].
MILLER, HC .
IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1993, 28 (04) :512-527
[9]  
SCHIFF LI, 1968, QUANTUM MECH, P106
[10]   COMPUTATIONAL ANALYSIS OF THE SURFACE PERMITTIVITY AND CHARGING OF DIELECTRICS WITH THE SEMI-MIRROR TECHNIQUE [J].
SUDARSHAN, TS ;
WANG, J .
IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1992, 27 (06) :1127-1135