TRANSIENT ENHANCED DIFFUSION WITHOUT (311)-DEFECTS IN LOW-ENERGY B+-IMPLANTED SILICON

被引：103

作者：

ZHANG, LH ^{[1
]}

JONES, KS ^{[1
]}

CHI, PH ^{[1
]}

SIMONS, DS ^{[1
]}

机构：

[1] NIST,CHEM SCI & TECHNOL LAB,GAITHERSBURG,MD 20899

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 14期

关键词：

D O I：

10.1063/1.114775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low energy and low dose B+-implanted Si has been studied using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS). Czochralski-grown (100) Si wafers were implanted with 4 keV B+ to a dose of 1 x 10(14)/cm(2). Subsequently, anneals were performed between 700 and 800 degrees C for times between 15 s and 8 h in an ambient atmosphere of Nz. SIMS results show transient enhanced diffusion (TED) of the boron that saturates in less than 15 min for all annealing temperatures studied. TED results in an increase in the junction depth by at least 60 nm at a 1 x 10(16)/cm(3) concentration. TEM studies show that, even for the shortest times before TED is observed, {311} defects are not detected. These results imply that there maybe more than one source of interstitials for TED. (C) 1995 American Institute of Physics.

引用

页码：2025 / 2027

页数：3

共 16 条

[1] ON THE RELATION BETWEEN DOPANT ANOMALOUS DIFFUSION IN SI AND END-OF-RANGE DEFECTS [J].