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SIMPLE CONTACTLESS METHOD FOR MEASURING DECAY TIME OF PHOTOCONDUCTIVITY IN SILICON
被引:3
作者
:
LICHTENSTEIN, RM
论文数:
0
引用数:
0
h-index:
0
LICHTENSTEIN, RM
WILLARD, HJ
论文数:
0
引用数:
0
h-index:
0
WILLARD, HJ
机构
:
来源
:
REVIEW OF SCIENTIFIC INSTRUMENTS
|
1967年
/ 38卷
/ 01期
关键词
:
D O I
:
10.1063/1.1720508
中图分类号
:
TH7 [仪器、仪表];
学科分类号
:
0804 ;
080401 ;
081102 ;
摘要
:
引用
收藏
页码:133 / +
页数:1
相关论文
共 3 条
[1]
LIFETIME MEASUREMENTS OF EXCESS CARRIERS IN SEMICONDUCTORS
[J].
HARRICK, NJ
论文数:
0
引用数:
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h-index:
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HARRICK, NJ
.
JOURNAL OF APPLIED PHYSICS,
1956,
27
(12)
:1439
-1442
[2]
RADIO-FREQUENCY CARRIER AND CAPACTIVE COUPLING PROCEDURES FOR RESISTIVITY AND LIFETIME MEASUREMENTS ON SILICON
[J].
WEINGARTEN, IR
论文数:
0
引用数:
0
h-index:
0
WEINGARTEN, IR
;
ROTHBERG, M
论文数:
0
引用数:
0
h-index:
0
ROTHBERG, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1961,
108
(02)
:167
-171
[3]
1961, P IRE 2, V49, P1292
←
1
→
共 3 条
[1]
LIFETIME MEASUREMENTS OF EXCESS CARRIERS IN SEMICONDUCTORS
[J].
HARRICK, NJ
论文数:
0
引用数:
0
h-index:
0
HARRICK, NJ
.
JOURNAL OF APPLIED PHYSICS,
1956,
27
(12)
:1439
-1442
[2]
RADIO-FREQUENCY CARRIER AND CAPACTIVE COUPLING PROCEDURES FOR RESISTIVITY AND LIFETIME MEASUREMENTS ON SILICON
[J].
WEINGARTEN, IR
论文数:
0
引用数:
0
h-index:
0
WEINGARTEN, IR
;
ROTHBERG, M
论文数:
0
引用数:
0
h-index:
0
ROTHBERG, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1961,
108
(02)
:167
-171
[3]
1961, P IRE 2, V49, P1292
←
1
→