MELT AND SOLUTION GROWTH OF BULK SINGLE-CRYSTALS OF QUATERNARY-III-V ALLOYS

Due to limitations imposed by phase relations and by kinetic parameters, the growth of single crystals of quaternary III-V alloys by melt and solution growth techniques is restricted to a few systems that either have been made or have been theoretically suggested - e.g. GaxIn1-xPyAs1-y, AlxGayIn1-x-ySb - and to certain sections within the existence range of solid solutions in the systems GaxIn1-xAsySb1-y and InPxAsySb1-x-y. In favorable regions of composition of the GaxIn1-xPyAs1-y system, homogeneous ternary and quaternary crystals have been prepared. For nominally undoped material these alloy crystals exhibit similar net carrier concentrations, defect densities and photo-luminescence properties as bulk single crystals of their binary constituents. © 1981.