O-1S STUDIES OF THE OXIDATION OF INP(110) AND GAAS(110) SURFACES

被引：74

作者：

HUGHES, G ^{[1
]}

LUDEKE, R ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1109 / 1114

页数：6

共 21 条

[1] OXYGEN ON GAAS(110) - NEW RESULTS CONFIRMING THE 2-STEP UPTAKE-MODEL
BARTELS, F
GROLL, H
MONCH, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1100 - 1101
[2] CHEMISORPTION OF OXYGEN AT CLEAVED GAAS(110) SURFACES - PHOTON STIMULATION AND CHEMISORPTION STATES
BARTELS, F
MONCH, W
[J]. SURFACE SCIENCE, 1984, 143 (2-3) : 315 - 341
[3] OXYGEN AND HYDROGEN ADSORPTION ON GAAS(110)
BARTELS, F
SURKAMP, L
CLEMENS, HJ
MONCH, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 756 - 762
[4] OXYGEN-CHEMISORPTION ON GAAS(110) - SURFACE OR SUBSURFACE GROWTH
BERTNESS, KA
FRIEDMAN, DJ
MAHOWALD, PH
YEH, JJ
WAHI, AK
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1102 - 1108
[5] OXYGEN INTERACTION WITH GAAS-SURFACES - XPS-UPS STUDY
BRUNDLE, CR
SEYBOLD, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1186 - 1190
[6] QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS
BUTERA, RA
DELGIUDICE, M
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5435 - 5449
[7] PHOTOEMISSION-STUDIES OF THE INITIAL-STAGES OF OXIDATION OF GASB AND INP
CHYE, PW
SU, CY
LINDAU, I
GARNER, CM
PIANETTA, P
SPICER, WE
[J]. SURFACE SCIENCE, 1979, 88 (2-3) : 439 - 460
[8] SI(111) SURFACE OXIDATION - O-1S CORE-LEVEL STUDY USING SYNCHROTRON RADIATION
HOLLINGER, G
MORAR, JF
HIMPSEL, FJ
HUGHES, G
JORDAN, JL
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 609 - 616
[9] ON THE NATURE OF OXIDES ON INP-SURFACES
HOLLINGER, G
BERGIGNAT, E
JOSEPH, J
ROBACH, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2082 - 2088
[10] EARLY STAGES IN THE FORMATION OF THE OXIDE-INP(110) INTERFACE
HOLLINGER, G
HUGHES, G
HIMPSEL, FJ
JORDAN, JL
MORAR, JF
HOUZAY, F
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 617 - 625

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