OXYGEN-CHEMISORPTION ON GAAS(110) - SURFACE OR SUBSURFACE GROWTH

被引:26
作者
BERTNESS, KA
FRIEDMAN, DJ
MAHOWALD, PH
YEH, JJ
WAHI, AK
LINDAU, I
SPICER, WE
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期
关键词
D O I
10.1116/1.583550
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1102 / 1108
页数:7
相关论文
共 19 条
[1]   CHEMISORPTION OF OXYGEN AT CLEAVED GAAS(110) SURFACES - PHOTON STIMULATION AND CHEMISORPTION STATES [J].
BARTELS, F ;
MONCH, W .
SURFACE SCIENCE, 1984, 143 (2-3) :315-341
[2]   RECONSTRUCTION AND OXIDATION OF THE GAAS(110) SURFACE [J].
BARTON, JJ ;
GODDARD, WA ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1178-1185
[3]   OPTICALLY ENHANCED LOW-TEMPERATURE OXYGEN-CHEMISORPTION ON GAAS(110) [J].
BERTNESS, KA ;
PETRO, WG ;
SILBERMAN, JA ;
FRIEDMAN, DJ ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1464-1467
[4]   OXYGEN INTERACTION WITH GAAS-SURFACES - XPS-UPS STUDY [J].
BRUNDLE, CR ;
SEYBOLD, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1186-1190
[5]   EFFECT OF THE MADELUNG POTENTIAL ON SURFACE CORE-LEVEL SHIFTS IN GAAS [J].
DAVENPORT, JW ;
WATSON, RE ;
PERLMAN, ML ;
SHAM, TK .
SOLID STATE COMMUNICATIONS, 1981, 40 (11) :999-1002
[6]   ADSORPTION OF OXYGEN ON CLEAN CLEAVED (110) GALLIUM-ARSENIDE SURFACES [J].
DORN, R ;
LUTH, H ;
RUSSELL, GJ .
PHYSICAL REVIEW B, 1974, 10 (12) :5049-5056
[7]  
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[8]   AN ELLIPSOIDAL MIRROR DISPLAY ANALYZER SYSTEM FOR ELECTRON-ENERGY AND ANGULAR MEASUREMENTS [J].
EASTMAN, DE ;
DONELON, JJ ;
HIEN, NC ;
HIMPSEL, FJ .
NUCLEAR INSTRUMENTS & METHODS, 1980, 172 (1-2) :327-336
[9]   CHEMICAL DEPTH PROFILES OF THE GAAS-NATIVE OXIDE INTERFACE [J].
GRUNTHANER, PJ ;
VASQUEZ, RP ;
GRUNTHANER, FJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1045-1051
[10]   0-1S CORE LEVEL STUDIES OF THE OXIDATION OF GAAS(110) [J].
HUGHES, G ;
LUDEKE, R ;
MORAR, JF ;
JORDAN, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1079-1080