EXPERIMENTAL INVESTIGATION OF DOUBLE INJECTION IN P-TYPE SILICON

被引：4

作者：

OKAZAKI, S

HIRAMATSU, M

机构：

[1] Department of Physics, Faculty of Science Okayama University

来源：

关键词：

D O I：

10.1143/JJAP.7.557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：557 / +

页数：1

共 6 条

[1] SPACE-CHARGE-LIMITED CURRENTS IN HIGH-RESISTIVITY P-TYPE SILICON [J].

HAGENLOCHER, AK .

LAMPERT, MA ;

ROSE, A .

PHYSICAL REVIEW, 1961, 121 (01) :26-&

MARSH, OJ ;

MAYER, JW ;

BARON, R .

MARSH, OJ ;

VISWANAT.CR .

OKAZAKI, S ;

HIRAMATSU, M .

[6] DOUBLE-INJECTION EXPERIMENTS IN SEMI-INSULATING SILICON DIODES [J].

WAGENER, JL ;

MILNES, AG .