DEPENDENCE OF DOUBLE INJECTION CURRENTS ON BOTH VOLTAGE AND SAMPLE THICKNESS IN P-TYPE SILICON

被引：5

作者：

OKAZAKI, S

HIRAMATSU, M

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(67)90597-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：475 / +

页数：1

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[6] OBSERVATIONS OF SPACE-CHARGE-LIMITED CURRENTS IN P-TYPE SILICON [J].

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