AVALANCHING OPTOELECTRONIC MICROWAVE SWITCH

被引：4

作者：

KIEHL, RA

机构：

[1] Sandia Laboratories, Sandia Laboratories is a United States Department of Energy Facility, Albuquerque

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 05期

关键词：

D O I：

10.1109/TMTT.1979.1129663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new optoelectronic microwave switching device is described. The device is composed of a semiconductor junction diode that is incorporated into a transmission line and illuminated with optical pulses from a semiconductor laser. Switching of microwave signals is achieved by changes in the RF impedance of the diode's high-field region resulting from an optically induced switching between low- and high-level avalanche states. Experimental results demonstrating the switching characteristics and speed of this device are presented along with a basic theory of operation. The ultimate capabilities of this device and its advantages over conventional p-i-n diode switches and other optoelectronic switching devices are also discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：533 / 539

页数：7

共 10 条

[1] AVALANCHE-PHOTODIODE FREQUENCY RESPONSE [J].