STRUCTURE AND OPTICAL-PROPERTIES OF SILICON IMPLANTED BY HIGH-DOSES OF 70 AND 310 KEV CARBON-IONS

被引：21

作者：

AKIMCHENKO, IP

KISSELEVA, KV

KRASNOPEVTSEV, VV

TOURYANSKI, AG

VAVILOV, VS

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 48卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209220

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：7 / 12

页数：6

共 5 条

[1] STRUCTURE OF SILICON-CARBIDE SYNTHESIZED IN DIAMOND AND SILICON BY ION-IMPLANTATION
AKIMCHENKO, IP
KISSELEVA, KV
KRASNOPEVTSEV, VV
MILYUTIN, YV
TOURYANSKY, AG
VAVILOV, VS
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 75 - 80
[2] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS
KENNEDY, EF
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246
[3] KONOPLEV VS, 1976, RAD EFF SEMICONDUCTO, P244
[4] VIBRATIONAL ABSORPTION OF CARBON AND CARBON-OXYGEN COMPLEXES IN SILICON
NEWMAN, RC
SMITH, RS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (06) : 1493 - &
[5] [No title captured]